Next‐generation solid‐state detectors for charged particle spectroscopy

The performance of silicon avalanche photodiodes (APDs) and single crystal chemical vapor deposit diamond detectors (DDs) is reviewed in comparison with conventional silicon‐based solid‐state detectors (SSDs) from the perspective of space plasma applications. Although the low‐energy threshold and th...

Full description

Saved in:
Bibliographic Details
Published in:Journal of geophysical research. Space physics 2016-07, Vol.121 (7), p.6075-6091
Main Authors: Ogasawara, K., Livi, S. A., Allegrini, F., Broiles, T. W., Dayeh, M. A., Desai, M. I., Ebert, R. W., Llera, K., Vines, S. K., McComas, D. J.
Format: Article
Language:English
Subjects:
Acceleration
Amplification
Avalanche diodes
Avalanches
Carrier mobility
Charged particles
Chemical vapor deposition
Crystals
Detectors
Diamonds
Electric charge
Electric fields
Energetic particles
Energy resolution
Equivalence
Evolution
Hardness
Heating
High temperature
Leakage
Low energy
Photodiodes
Radiation
Response time
Saturation
Sensors
Silicon
Solid state
solid state detector
space plasma
Space plasmas
Spectroscopy
Time measurements
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The performance of silicon avalanche photodiodes (APDs) and single crystal chemical vapor deposit diamond detectors (DDs) is reviewed in comparison with conventional silicon‐based solid‐state detectors (SSDs) from the perspective of space plasma applications. Although the low‐energy threshold and the energy resolution are equivalent to SSDs, DDs offer a high radiation tolerance and very low leakage currents due to a wider band gap than silicon. In addition, DDs can operate at higher temperatures, are insensitive to light (>226 nm), and are capable of timing analysis due to the higher intrinsic carrier mobility. APDs also offer several advantageous features. Specifically, APDs have a lower energy threshold (
ISSN:2169-9380
2169-9402
DOI:10.1002/2016JA022559