Mechanical response of all-MoS2 single-layer heterostructures: a ReaxFF investigation

Molybdenum disulfide (MoS2) is a highly attractive 2D material due to its interesting electronic properties. Recent experimental advances confirm the possibility of further tuning the electronic properties of MoS2 through the fabrication of single-layer heterostructures consisting of semiconducting...

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Bibliographic Details
Published in:Physical chemistry chemical physics : PCCP 2016-09, Vol.18 (34), p.23695-23701
Main Authors: Mortazavi, Bohayra, Ostadhossein, Alireza, Rabczuk, Timon, van Duin, Adri C T
Format: Article
Language:English
Subjects:
Electronic properties
Heterostructures
Mechanical analysis
Mechanical properties
Molecular dynamics
Molybdenum disulfide
Phases
Tuning
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Summary:Molybdenum disulfide (MoS2) is a highly attractive 2D material due to its interesting electronic properties. Recent experimental advances confirm the possibility of further tuning the electronic properties of MoS2 through the fabrication of single-layer heterostructures consisting of semiconducting (2H) and metallic (1T) MoS2 phases. Nonetheless, despite significant technological and scientific interest, there is currently limited information concerning the mechanical properties of these heterostructure systems. This investigation aims at extending our understanding of the mechanical properties of all-MoS2 single-layer structures at room temperature. This goal was achieved by performing extensive classical molecular dynamics simulations using a recently developed ReaxFF force field. We first studied the direction dependent mechanical properties of defect-free 2H and 1T phases. Our modelling results for pristine 2H MoS2 were found to be in good agreement with the experimental tests and first-principles theoretical predictions. We also discuss the mechanical response of 2H/1T single layer heterostructures. Our reactive molecular dynamics results suggest all-MoS2 heterostructures as suitable candidates for providing a strong and flexible material with tuneable electronic properties.
ISSN:1463-9076
1463-9084
DOI:10.1039/c6cp03612k