Direct correlation of microstructure and device performance of liquid phase crystallized Si thin film solar cells on glass

Si thin films on glass grown by liquid phase crystallization (LPC) exhibit large grains resembling those in multicrystalline Si wafers. The present work gives direct insight into how planar defects in LPC‐Si thin films influence the device performance of the corresponding solar cells by acquiring el...

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Bibliographic Details
Published in:Physica status solidi. PSS-RRL. Rapid research letters 2016-09, Vol.10 (9), p.657-661
Main Authors: Kühnapfel, Sven, Gall, Stefan, Sonntag, Paul, Schäfer, Norbert, Abou-Ras, Daniel
Format: Article
Language:English
Subjects:
Crystal defects
Crystallization
Devices
electron backscatter diffraction
Glass
liquid phase crystallization
Liquid phases
Photovoltaic cells
Silicon
Solar cells
Solid state physics
structure
Thin films
zone melting recrystallization
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Summary:Si thin films on glass grown by liquid phase crystallization (LPC) exhibit large grains resembling those in multicrystalline Si wafers. The present work gives direct insight into how planar defects in LPC‐Si thin films influence the device performance of the corresponding solar cells by acquiring electron‐backscatter diffraction maps and measuring solar cell parameters on the same identical positions. By this approach, it was possible to demonstrate how low scanning velocities of the laser line during the crystallization lead to lower densities of grain boundaries, to improved charge‐carrier diffusion lengths, and hence to improved device performances. Orientation‐distribution map acquired by electron backscatter diffraction on a Si thin film crystallized via liquid phase crystallization. By acquiring electron backscatter diffraction maps and measuring solar cell parameters on the same identical positions, the present letter gives direct insight into how planar defects in Si thin films produced by liquid‐phase crystallization influence the device performance of the corresponding solar cells.
ISSN:1862-6254
1862-6270
DOI:10.1002/pssr.201600219