Metallic CsI at pressures of up to 220 gigapascals

Direct electrical transport measurements in a diamond anvil cell provide evidence for the metallization of cesium iodide (CsI) at a pressure of 115 gigapascals. A drop in the temperature dependence of the resistance was found at pressures above 180 gigapascals, indicating that the CsI was supercondu...

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Bibliographic Details
Published in:Science (American Association for the Advancement of Science) 1998-08, Vol.281 (5381), p.1333-1335
Main Authors: Eremets, MI, Shimizu, K, Kobayashi, TC, Amaya, K
Format: Article
Language:English
Subjects:
Cesium iodide
High pressure (Physics)
High pressure (Science)
Materials science
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Summary:Direct electrical transport measurements in a diamond anvil cell provide evidence for the metallization of cesium iodide (CsI) at a pressure of 115 gigapascals. A drop in the temperature dependence of the resistance was found at pressures above 180 gigapascals, indicating that the CsI was superconductive. The superconductivity changed under the influence of a magnetic field to a lower critical temperature and disappeared above 0.3 tesla. The highest critical temperature at which superconductivity was observed was 2 kelvin, and the critical temperature decreased with increasing pressure.
ISSN:0036-8075
1095-9203
DOI:10.1126/science.281.5381.1333