Physical mechanism of surface blistering process in H-implanted Ge

Hydrogen (H) implantation-induced damage was investigated in (100) germanium (Ge) for the physical understanding of the surface blistering phenomenon. Ge samples were implanted at liquid nitrogen and room temperatures using 100 keV H⁺ ions with a fluence of 1 × 10¹⁷ cm⁻². The hydrogen ion current de...

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Bibliographic Details
Published in:Journal of materials science 2016-06, Vol.51 (11), p.5397-5402
Main Authors: Dadwal, U., Kumar, Praveen, Hähnel, A., Singh, R.
Format: Article
Language:English
Subjects:
Agglomerated defects
Blistering
Characterization and Evaluation of Materials
Chemistry and Materials Science
Classical Mechanics
Crystallography and Scattering Methods
Damage
Diffraction
Fluence
Germanium
Hydrogen
Hydrogen ions
Implantation
Ion current density
Ion currents
Liquid nitrogen
Materials Science
Original Paper
Platelets
Polymer Sciences
Scanning electron microscopy
Scanning transmission electron microscopy
Solid Mechanics
Strain
Stresses
Temperature dependence
Transmission electron microscopy
X-ray diffraction
X-rays
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Summary:Hydrogen (H) implantation-induced damage was investigated in (100) germanium (Ge) for the physical understanding of the surface blistering phenomenon. Ge samples were implanted at liquid nitrogen and room temperatures using 100 keV H⁺ ions with a fluence of 1 × 10¹⁷ cm⁻². The hydrogen ion current density was kept at 10 µA cm⁻² during the implantation. H-implanted samples were subsequently annealed at higher temperatures up to 500 °C in order to trigger surface blistering. X-ray diffraction studies of the H-implanted samples showed the existence of damage-induced stress and its prominent dependence on the implantation temperature. Damage-induced stress was found to be sufficiently large to guide the hydrogen diffusion and defects agglomeration. Microstructural investigations of the H-induced damage were carried out using cross-sectional transmission electron microscopy and annular dark-field scanning transmission electron microscopy. It showed that H-induced agglomerated defects were in the form of platelets surrounded by the strain field. Strain field strains the matrix lattice for the eventual occurrence of surface blistering in H-implanted Ge.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-016-9842-6