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Al-doping induced formation of oxygen-vacancy for enhancing gas-sensing properties of SnO2 NTs by electrospinning

In this work, we report on the gas-sensing behavior of Al-doped SnO2 nanotubes (NTs) in order to evaluate the effect of Al on improved sensing performance and propose an oxygen-vacancy-dominating sensing mechanism of SnO2. The hierarchical mesoporous Al-doped SnO2 NTs are fabricated by simple electr...

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Published in:Sensors and actuators. B, Chemical Chemical, 2014-07, Vol.198, p.62-69
Main Authors: Wu, Jinjin, Huang, Qingwu, Zeng, Dawen, Zhang, Shunping, Yang, Lin, Xia, Dongsheng, Xiong, Zhongduo, Xie, Changsheng
Format: Article
Language:English
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Summary:In this work, we report on the gas-sensing behavior of Al-doped SnO2 nanotubes (NTs) in order to evaluate the effect of Al on improved sensing performance and propose an oxygen-vacancy-dominating sensing mechanism of SnO2. The hierarchical mesoporous Al-doped SnO2 NTs are fabricated by simple electrospinning method and annealing treatment. Al-doping shows profound influence on the oxygen vacancy of SnO2 which changes as a function of Al/(Al+Sn) ratio and the oxygen vacancy exhibits a maximum value when the ratio is 8%. As a result, the gas-sensing response to formaldehyde varies following the oxygen vacancies. Oxygen vacancies at the surface of SnO2 facilitate oxygen adsorption and the formation of surface catalytic active O−O−, thus the gas response is remarkably enhanced. Furthermore, a new fundamental understanding toward the gas-sensing performance of oxygen-vacancy-dominating SnO2 is proposed.
ISSN:0925-4005
1873-3077
DOI:10.1016/j.snb.2014.03.012