Textile Resistance Switching Memory for Fabric Electronics

• Published in: Advanced functional materials 2017-04, Vol.27 (15), p.np-n/a
• Main Authors: Jo, Anjae, Seo, Youngdae, Ko, Museok, Kim, Chaewon, Kim, Heejoo, Nam, Seungjin, Choi, Hyunjoo, Hwang, Cheol Seong, Lee, Mi Jung
• Format: Article
• Language: English
• Subjects: Al2O3; Aluminum oxide; Bias; carbon fibers; Cloth; Contact; cotton fibers; Devices; Electric contacts; Electrical resistance; Insulators; Materials science; Materials selection; Memory devices; Polarity; resistive switching memory; Sewing; Switching; Textiles; Uniqueness; Vanadium; wearable computer; Wearable technology
• ISSN: 1616-301X; 1616-3028
• DOI: 10.1002/adfm.201605593

A new type of wearable electronic device, called a textile memory, is reported. This is created by combining the unique properties of Al‐coated threads with a native layer of Al2O3 as a resistance switching layer, and carbon fiber as the counter‐electrode, which induces a fluent redox reaction at the interface under a small electrical bias (typically 2–3 V). These two materials can be embroidered into an existing cloth or woven into a novel cloth. The electrical resistance of the contacts is repeatedly switched by the bias polarity, as observed in the recently highlighted resistance switching memory. The devices with different structure from the solid metal‐insulator‐metal devices show reliable resistance switching behaviors in textile form by single stitch and in array as well that would render this new type of material system applicable to a broad range of emerging wearable devices. Such behavior cannot be achieved in other material choices, revealing the uniqueness of this material system. Textile resistive switching memory devices are fabricated using common threads with aluminum coating and carbon fibers by simple physical contact by weaving without additional resistance switching layer. A redox reaction between native aluminum oxide and carbon creates a conducting path upon bias applied.