n‐Type Doped Conjugated Polymer for Nonvolatile Memory

This study demonstrates a facile way to efficiently induce strong memory behavior from common p‐type conjugated polymers by adding n‐type dopant 2‐(2‐methoxyphenyl)‐1,3‐dimethyl‐2,3‐dihydro‐1H‐benzoimidazole. The n‐type doped p‐channel conjugated polymers not only enhance n‐type charge transport cha...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2017-04, Vol.29 (16), p.np-n/a
Main Authors: Lee, Wen‐Ya, Wu, Hung‐Chin, Lu, Chien, Naab, Benjamin D., Chen, Wen‐Chang, Bao, Zhenan
Format: Article
Language:English
Subjects:
Blending
Charge transfer
Charge transport
Chemical industry
Computer memory
Devices
Dopants
Doping
Electron mobility
field‐effect transistors
Hysteresis
Materials science
nonvolatile memory
n‐type doping
Polymers
Switching
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Summary:This study demonstrates a facile way to efficiently induce strong memory behavior from common p‐type conjugated polymers by adding n‐type dopant 2‐(2‐methoxyphenyl)‐1,3‐dimethyl‐2,3‐dihydro‐1H‐benzoimidazole. The n‐type doped p‐channel conjugated polymers not only enhance n‐type charge transport characteristics of the polymers, but also facilitate to storage charges and cause reversible bistable (ON and OFF states) switching upon application of gate bias. The n‐type doped memory shows a large memory window of up to 47 V with an on/off current ratio larger than 10 000. The charge retention time can maintain over 100 000 s. Similar memory behaviors are also observed in other common semiconducting polymers such as poly(3‐hexyl thiophene) and poly[2,5‐bis(3‐tetradecylthiophen‐2‐yl)thieno[3,2‐b]thiophene], and a high mobility donor–acceptor polymer, poly(isoindigo‐bithiophene). In summary, these observations suggest that this approach is a general method to induce memory behavior in conjugated polymers. To the best of the knowledge, this is the first report for p‐type polymer memory achieved using n‐type charge‐transfer doping. A memory effect in a p‐type polymer is demonstrated through n‐typing of the polymer. After blending with an n‐type dopant in a p‐type conjugated‐polymer matrix, the doped polymer device exhibits enhanced hysteresis and outstanding memory behavior. The memory effect is attributed to the formation of charge‐trapping sites and improved electron mobility by the n‐type doping.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201605166