Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field‐Effect Transistors

The charge‐carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithio...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2017-09, Vol.29 (36), p.n/a
Main Authors: Chen, Hu, Hurhangee, Michael, Nikolka, Mark, Zhang, Weimin, Kirkus, Mindaugas, Neophytou, Marios, Cryer, Samuel J., Harkin, David, Hayoz, Pascal, Abdi‐Jalebi, Mojtaba, McNeill, Christopher R., Sirringhaus, Henning, McCulloch, Iain
Format: Article
Language:English
Subjects:
Addition polymerization
Carrier mobility
Chemical synthesis
Copolymers
Current carriers
CH cyclization
Electric contacts
Electrical properties
Field effect transistors
high‐mobility
Hole mobility
IDT
IDTT
organic field‐effect transistors (OFETs)
Polymers
Ring structures
Semiconductor devices
Thin film transistors
TIF
Transistors
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Summary:The charge‐carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene (IDT) repeat unit, which have both a low Urbach energy and a high mobility in thin‐film‐transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin‐film morphology evaluated, with the co‐benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm2 V−1 s−1 in bottom‐gate top‐contact organic field‐effect transistors. A novel bridged donor (TIF) with a large planar aromatic core is designed and synthesized using a novel intramolecular CH activation strategy. This TIF unit is copolymerized with BT, FBT, DFBT, and TT repeat units, with the TIF‐BT copolymer exhibiting a higher p‐type mobility (2.8 cm2 V−1 s−1) compared to previously reported IDT‐BT and IDTT‐BT copolymers using the same device‐fabrication method.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201702523