Enhanced light absorption and charge recombination control in quantum dot sensitized solar cells using tin doped cadmium sulfide quantum dots

• Published in: Journal of colloid and interface science 2019-01, Vol.534, p.291-300
• Main Authors: Muthalif, Mohammed Panthakkal Abdul, Sunesh, Chozhidakath Damodharan, Choe, Youngson
• Format: Article
• Language: English
• Subjects: Cadmium sulfide; Light absorption; Recombination; Solar cell; Tin doping
• ISSN: 0021-9797; 1095-7103
• DOI: 10.1016/j.jcis.2018.09.035

[Display omitted] The photovoltaic performance of quantum dot sensitized solar cells (QDSSCs) is limited due to charge recombination processes at the photoelectrode/electrolyte interfaces. We analyzed the effect of Sn4+ ion incorporation into CdS quantum dots (QDs) deposited onto TiO2 substrates in terms of enhancing light absorption and retarding electron-hole recombination at the TiO2/QDs/electrolyte interfaces. Sensitization involved depositing CdS QDs with different Sn4+ concentrations on the surface of TiO2 using a facile and cost-effective successive ionic layer adsorption and reaction (SILAR) method. Optimized photovoltaic performance of Sn-CdS sensitized QDSSCs was explored using CuS counter electrodes (CEs) and a polysulfide electrolyte. Structural and optical studies of the photoanodes revealed that the gaps between CdS nanoparticles were partially filled by Sn4+ ions, which enhanced the light absorption of the solar cell device. Electrochemical impedance spectroscopy (EIS) and open circuit voltage decay (OCVD) tests suggested that Sn4+ ions can remarkably retard electron-hole recombination at the interfaces, stimulate electron injection into semiconductor QD layers, and provide long-term electron lifetime to the cells. We found that solar cells based on CdS photoanodes doped with 10% Sn4+ ions exhibited a superior power conversion efficiency (PCE) of 3.22%, open circuit voltage (Voc) of 0.593 V, fill factor (FF) of 0.561, and short-circuit current density (Jsc) of 9.68 mA cm−2 under an air mass coefficient (AM) 1.5 G full sun illumination. These values were much higher than those of QDSSCs based on bare CdS photoanodes (PCE = 2.16%, Voc = 0.552 V, FF = 0.471, and Jsc = 8.31 mA cm−2).