Marginally Self-Averaging One-Dimensional Localization in Bilayer Graphene

The combination of a field-tunable band gap, topological edge states, and valleys in the band structure makes insulating bilayer graphene a unique localized system, where the scaling laws of dimensionless conductance g remain largely unexplored. Here we show that the relative fluctuations in lng wit...

Full description

Saved in:
Bibliographic Details
Published in:Physical review letters 2018-09, Vol.121 (13), p.136806-136806, Article 136806
Main Authors: Aamir, Md Ali, Karnatak, Paritosh, Jayaraman, Aditya, Sai, T Phanindra, Ramakrishnan, T V, Sensarma, Rajdeep, Ghosh, Arindam
Format: Article
Language:English
Subjects:
Band gap
Bilayers
Chemical potential
Dependence
Energy gap
Graphene
Localization
Organic chemistry
Resistance
Scaling laws
Transport
Variations
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The combination of a field-tunable band gap, topological edge states, and valleys in the band structure makes insulating bilayer graphene a unique localized system, where the scaling laws of dimensionless conductance g remain largely unexplored. Here we show that the relative fluctuations in lng with the varying chemical potential, in strongly insulating bilayer graphene (BLG), decay nearly logarithmically for a channel length up to L/ξ≈20, where ξ is the localization length. This "marginal" self-averaging, and the corresponding dependence of ⟨lng⟩ on L, suggests that transport in strongly gapped BLG occurs along strictly one-dimensional channels, where ξ≈0.5±0.1  μm was found to be much longer than that expected from the bulk band gap. Our experiment reveals a nontrivial localization mechanism in gapped BLG, governed by transport along robust edge modes.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.121.136806