Achieving Out-of-Plane Thermoelectric Figure of Merit ZT = 1.44 in a p‑Type Bi2Te3/Bi0.5Sb1.5Te3 Superlattice Film with Low Interfacial Resistance

• Published in: ACS applied materials & interfaces 2019-10, Vol.11 (41), p.38247-38254
• Main Authors: Park, No-Won, Lee, Won-Yong, Yoon, Yo-Seop, Kim, Gil-Sung, Yoon, Young-Gui, Lee, Sang-Kwon
• Format: Article
• Language: English
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.9b11042

Recently, low-dimensional superlattice films have attracted significant attention because of their low dimensionality and anisotropic thermoelectric (TE) properties such as the Seebeck coefficient, electrical conductivity, and thermal conductivity. For these superlattice structures, both electrons and phonons show highly anisotropic behavior and exhibit much stronger interface scattering in the out-of-plane direction of the films compared to the in-plane direction. However, no detailed information is available in the literature for the out-of-plane TE properties of the superlattice-based films. In this report, we present the out-of-plane Seebeck coefficient, thermal conductivity, and electrical properties of p-type Bi2Te3/Bi0.5Sb1.5Te3 (bismuth telluride/bismuth antimony telluride, BT/BST) superlattice films in the temperature range of 77–500 K. Because of the synergistic combination of the energy filtering effect and low interfacial resistance of the superlattice structure, an impressively high ZT of 1.44 was achieved at 400 K for the 200 nm-thick p-type BT/BST superlattice film, corresponding to a 43% ZT enhancement compared to the pristine p-BST films with the same thickness.