A Comparative Study of Light‐Emitting Diodes Based on All‐Inorganic Perovskite Nanoparticles (CsPbBr3) Synthesized at Room Temperature and by a Hot‐Injection Method

Perovskite nanoparticles (PeNPs) have been extensively studied for optoelectronic applications, owing to their extremely high photoluminescence quantum yield, tunable band gap, and exceptionally narrow emission spectra. Therefore, PeNPs are considered excellent candidates for the development of high...

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Bibliographic Details
Published in:ChemPlusChem (Weinheim, Germany) Germany), 2018-04, Vol.83 (4), p.294-299
Main Authors: Clasen Hames, Bruno, Sánchez Sánchez, Rafael, Fakharuddin, Azhar, Mora‐Seró, Iván
Format: Article
Language:English
Subjects:
light-emitting diodes
nanoparticles
perovskite phases
photochemistry
synthesis design
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Summary:Perovskite nanoparticles (PeNPs) have been extensively studied for optoelectronic applications, owing to their extremely high photoluminescence quantum yield, tunable band gap, and exceptionally narrow emission spectra. Therefore, PeNPs are considered excellent candidates for the development of high‐efficiency, low‐cost, wide‐gamut, and high‐purity color displays. However, their synthesis typically involves multistep cumbersome processes that might hinder commercial development. Herein, green light‐emitting diodes (LEDs) prepared by using all‐inorganic PeNPs CsPbBr3 synthesized at room temperature (RT) are reported and their performance compared with those prepared by a traditional hot‐injection method. Insights into the morphology and optoelectronic properties of RT PeNPs are provided through AFM and TEM and employing them in LEDs. Hot or not? Perovskite nanoparticles (PeNPs) are prepared through two different synthetic procedures: hot injection (HI) and room‐temperature (RT) synthesis. Light‐emitting diodes (LEDs) are prepared from the two types of PeNPs (see figure). Superior performance is exhibited by the HI PeNPs. Morphology and optoelectronic investigations reveal that HI PeNPs are characterized by a lower thin‐film surface roughness, narrow size distribution, and higher radiative yield that is responsible for higher performance.
ISSN:2192-6506
2192-6506
DOI:10.1002/cplu.201800014