Solid‐State Anodization of Aluminum by Vapor Infusion

• Published in: Journal of the Electrochemical Society 1979-09, Vol.126 (9), p.1548-1550
• Main Author: Jaklevic, R. C.
• Format: Article
• Language: English
• ISSN: 0013-4651; 1945-7111
• DOI: 10.1149/1.2129326

It is found possible to grow an oxide on Al by a solid-state technique with a vapor phase source of O. Thin film junctions of the form Al--aluminum oxide--M are used where the overlay metal film M is either or Au with < 1000 A thickness and the initial thickness of the oxide is approx 15 A. A positive bias is applied to the Al and the structure is to Ar or O at approx 95% relative humidity at room temperature. The presence the final oxide layer is verified by the systematic increase in resistance, a measured decrease in capacitance and an optical interference experiment which visually shows the presence of the oxide layer. The capacitance data indicate an oxide thickness proportional to voltage with a growth rate of approx 15 A/V, in agreement with the results of liquid anodization. of adsorbed water through grain boundaries or pores in the overlay film is believed to be the source of the O. Processes similar to liquid anodization must occur in the interfacial region between the metal electrodes and the oxide layer.7 refs.--AA.