Tunable Properties of Novel Ga2O3 Monolayer for Electronic and Optoelectronic Applications

A novel two-dimensional (2D) Ga2O3 monolayer was constructed and systematically investigated by first-principles calculations. The 2D Ga2O3 has an asymmetric configuration with a quintuple-layer atomic structure, the same as the well-studied α-In2Se3, and is expected to be experimentally synthesized...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2020-07, Vol.12 (27), p.30659-30669
Main Authors: Liao, Yikai, Zhang, Zhaofu, Gao, Zhibin, Qian, Qingkai, Hua, Mengyuan
Format: Article
Language:English
Subjects:
compression strength
electrons
Functional Nanostructured Materials (including low-D carbon)
gallium
indium
selenides
semiconductors
thermodynamics
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