Rashba Effect in Functional Spintronic Devices

Exploiting spin transport increases the functionality of electronic devices and enables such devices to overcome physical limitations related to speed and power. Utilizing the Rashba effect at the interface of heterostructures provides promising opportunities toward the development of high‐performan...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2020-12, Vol.32 (51), p.e2002117-n/a
Main Authors: Koo, Hyun Cheol, Kim, Seong Been, Kim, Hansung, Park, Tae‐Eon, Choi, Jun Woo, Kim, Kyoung‐Whan, Go, Gyungchoon, Oh, Jung Hyun, Lee, Dong‐Kyu, Park, Eun‐Sang, Hong, Ik‐Sun, Lee, Kyung‐Jin
Format: Article
Language:English
Subjects:
Electron spin
Electronic devices
Heterostructures
Materials science
Memory devices
Rashba effect
Semiconductor devices
spin memory
spin precession
spin transistors
Spintronics
spin–orbit torque
Torque
Transistors
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Summary:Exploiting spin transport increases the functionality of electronic devices and enables such devices to overcome physical limitations related to speed and power. Utilizing the Rashba effect at the interface of heterostructures provides promising opportunities toward the development of high‐performance devices because it enables electrical control of the spin information. Herein, the focus is mainly on progress related to the two most compelling devices that exploit the Rashba effect: spin transistors and spin–orbit torque devices. For spin field‐effect transistors, the gate‐voltage manipulation of the Rashba effect and subsequent control of the spin precession are discussed, including for all‐electric spin field‐effect transistors. For spin–orbit torque devices, recent theories and experiments on interface‐generated spin current are discussed. The future directions of manipulating the Rashba effect to realize fully integrated spin logic and memory devices are also discussed. The Rashba effect provides fascinating functionality for electronic devices because of the electric modulation of spin orientation. Semiconductor spin transistors and spin–orbit torque devices are reviewed. Recent theories and experiments related to generating and controlling spin current are presented. Future directions in the development of spin logic and memory devices are also discussed.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.202002117