Transmission electron microscopy of hydrogenated amorphous semiconductor superlattices

• Published in: Applied physics letters 1985-01, Vol.46 (2), p.171-173
• Main Authors: DECKMAN, H. W, DUNSMUIR, J. H, ABELES, B
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.95673

Transmission electron microscopy (TEM) of amorphous semiconductor superlattices grown by plasma assisted chemical vapor deposition demonstrates that sequential layers can be deposited without cumulative roughening and with atomically abrupt interfaces. Absence of cumulative roughening effects allows layers to be grown flat and smooth to within 5 Å on a∼100-Å lateral scale length, even after deposition of several hundred layers. In highly localized regions unusual defect structures appear as bifurcations of individual layers. The TEM sections used to investigate amorphous superlattice structure were prepared by a novel microfabrication technique.