Probing hole spin transport of disorder quantum dots via Pauli spin-blockade in standard silicon transistors

Single hole transport and spin detection is achievable in standard p-type silicon transistors owing to the strong orbital quantization of disorder based quantum dots. Through the use of the well acting as a pseudo-gate, we discover the formation of a double-quantum dot system exhibiting Pauli spin-b...

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Bibliographic Details
Published in:Nanotechnology 2021-06, Vol.32 (26), p.260001
Main Authors: Hillier, Joseph, Ono, Keiji, Ibukuro, Kouta, Liu, Fayong, Li, Zuo, Husain Khaled, Muhammad, Nicholas Rutt, Harvey, Tomita, Isao, Tsuchiya, Yoshishige, Ishibashi, Koji, Saito, Shinichi
Format: Article
Language:English
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Summary:Single hole transport and spin detection is achievable in standard p-type silicon transistors owing to the strong orbital quantization of disorder based quantum dots. Through the use of the well acting as a pseudo-gate, we discover the formation of a double-quantum dot system exhibiting Pauli spin-blockade and investigate the magnetic field dependence of the leakage current. This enables attributes that are key to hole spin state control to be determined, where we calculate a tunnel coupling of 57 eV and a short spin-orbit length of 250 nm. The demonstrated strong spin-orbit interaction at the interface when using disorder based quantum dots supports electric-field mediated control. These results provide further motivation that a readily scalable platform such as industry standard silicon technology can be used to investigate interactions which are useful for quantum information processing.
ISSN:0957-4484
1361-6528
DOI:10.1088/1361-6528/abef91