Large-scale growth of few-layer two-dimensional black phosphorus

• Published in: Nature materials 2021-09, Vol.20 (9), p.1203-1209
• Main Authors: Wu, Zehan, Lyu, Yongxin, Zhang, Yi, Ding, Ran, Zheng, Beining, Yang, Zhibin, Lau, Shu Ping, Chen, Xian Hui, Hao, Jianhua
• Format: Article
• Language: English
• Subjects: 639/301/357/1018; 639/301/357/551; Biomaterials; Carrier mobility; Chemistry and Materials Science; Condensed Matter Physics; Field effect transistors; Hole mobility; Homogeneity; Information industry; Laser ablation; Lasers; Letter; Materials Science; Nanotechnology; Optical and Electronic Materials; Phosphorus; Pulsed laser deposition; Pulsed lasers; Semiconductor devices; Transistors; Two dimensional materials
• ISSN: 1476-1122; 1476-4660
• DOI: 10.1038/s41563-021-01001-7

Two-dimensional materials provide opportunities for developing semiconductor applications at atomistic thickness to break the limits of silicon technology. Black phosphorus (BP), as a layered semiconductor with controllable bandgap and high carrier mobility, is one of the most promising candidates for transistor devices at atomistic thickness 1 – 4 . However, the lack of large-scale growth greatly hinders its development in devices. Here, we report the growth of ultrathin BP on the centimetre scale through pulsed laser deposition. The unique plasma-activated region induced by laser ablation provides highly desirable conditions for BP cluster formation and transportation 5 , 6 , facilitating growth. Furthermore, we fabricated large-scale field-effect transistor arrays on BP films, yielding appealing hole mobility of up to 213 and 617 cm 2  V −1  s −1 at 295 and 250 K, respectively. Our results pave the way for further developing BP-based wafer-scale devices with potential applications in the information industry. Centimetre-scale growth of few-layer black phosphorous with high crystalline quality and homogeneity is realized by pulsed laser deposition.