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Construction of direct Z-scheme photocatalyst by the interfacial interaction of WO3 and SiC to enhance the redox activity of electrons and holes
The direct Z-scheme heterojunction structure benefits separation and migration of photoinduced carriers while maintaining original redox ability of each component. Nowadays, most Z-scheme structures are fabricated by g-C3N4 with other narrow band photocatalysts due to its low conduction band (CB). I...
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Published in: | Chemosphere (Oxford) 2021-11, Vol.282, p.130866-130866, Article 130866 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The direct Z-scheme heterojunction structure benefits separation and migration of photoinduced carriers while maintaining original redox ability of each component. Nowadays, most Z-scheme structures are fabricated by g-C3N4 with other narrow band photocatalysts due to its low conduction band (CB). In this paper, SiC, another kind of photoelectric semiconductor with low CB, was employed to prepare direct Z-scheme photocatalyst with 2D WO3 by simple water oxidation precipitation method. The component and interface band structure of Z-scheme heterojunction WO3/SiC (WS) were verified by XPS, KPFM, Mott-Schottky method. The photodegradation efficiency and rate constant values of WS-1 for degrading RhB enhanced 2.5 and 5.3 times respectively compared with pristine WO3. Radical capture experiments and ESR tests affirmed that WS-1 photocatalyst produced •OH and •O2-active species, which further confirmed the photogenerated carriers were transmitted through the Z-scheme mode in principle. Band structure investigation showed that the direct Z-scheme structure assembled by WO3 with high valence band (VB) and SiC with low CB could maintain the high photocatalytic activity of active species. Therefore, this study offers a feasible method for construction of a novel and efficient direct Z-scheme photocatalyst.
•Novelty direct Z-scheme WO3/SiC heterojunction is firstly synthesized.•The interface band structure of WO3/SiC heterojunction is verified.•High VB potential of WO3 and low CB potential of SiC are utilized simultaneously.•Photodegradation efficiency of WO3/SiC is 2.5 and 42.1 times than that of WO3 and SiC. |
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ISSN: | 0045-6535 1879-1298 |
DOI: | 10.1016/j.chemosphere.2021.130866 |