A 400-A/2000-V MOS-GTO with improved cell design

For the first time, a large-area MOS-controlled thyristor (MOS-GTO) has been realized by introducing a new wafer-scale repair technique. The large-area device has a diameter of 3 cm. It has been contacted with an IC-compatible pressure contact and has been fabricated on lowly doped n-type substrate...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1992-06, Vol.39 (6), p.1521-1528
Main Authors: STOISIEK, M, OPPERMANN, K. G, STENGL, R
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Other multijunction devices. Power transistors. Thyristors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:For the first time, a large-area MOS-controlled thyristor (MOS-GTO) has been realized by introducing a new wafer-scale repair technique. The large-area device has a diameter of 3 cm. It has been contacted with an IC-compatible pressure contact and has been fabricated on lowly doped n-type substrate suitable for very-high-voltage applications comparable to conventional GTOs. The snubbered and unsnubbered turn-off currents were 400 and 200 A, respectively. The currents could be switched up to a final anode-to-cathode voltage of greater than 1500 V. The unique turn-off capabilities have been achieved by an improved design of the MOS-controlled emitter cell. The main feature of the new cell design is an integrated emitter series resistor, which avoids current filamentation during turn-off. In addition an n(+)-buried layer underneath the source of the MOS-controlled emitter cell has been used to reduce the parasitic action of the MOS part of the emitter cell during the on-state. (Author)
ISSN:0018-9383
1557-9646
DOI:10.1109/16.137335