In sub(x)Ga sub(1-x)As sub(y)P sub(1-y) (0.53 < x < 1, 0 < y < 1) compound semiconductor for LD structures by organometallic vapor-phase epitaxy

A systematic study in the growth of In sub(x)Ga sub(1-x)As sub(y)P sub(1-y) (0.53 < x < 1,0 < y < 1) compound semiconductor and its application to laser diode structure had been carried out by the low-pressure organometallic vapor phase epitaxy (LP-OMVPE) technique. The indium, gallium,...

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Bibliographic Details
Published in:Journal of crystal growth 1992-01, Vol.123 (3-4), p.451-458
Main Authors: Lin, Wei, Tu, Yuan-Kuang, Dai, Ting-Arn, Ho, Wen-Jeng, Lee, Gwo-Yue, Shiao, Hung-Pin
Format: Article
Language:English
Online Access:Get full text
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