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Spin-crossover nanoparticles anchored on MoS2 layers for heterostructures with tunable strain driven by thermal or light-induced spin switching
In the past few years, the effect of strain on the optical and electronic properties of MoS 2 layers has attracted particular attention as it can improve the performance of optoelectronic and spintronic devices. Although several approaches have been explored, strain is typically externally applied o...
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Published in: | Nature chemistry 2021-11, Vol.13 (11), p.1101-1109 |
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Main Authors: | , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In the past few years, the effect of strain on the optical and electronic properties of MoS
2
layers has attracted particular attention as it can improve the performance of optoelectronic and spintronic devices. Although several approaches have been explored, strain is typically externally applied on the two-dimensional material. In this work, we describe the preparation of a reversible ‘self-strainable’ system in which the strain is generated at the molecular level by one component of a MoS
2
-based composite material. Spin-crossover nanoparticles were covalently grafted onto functionalized layers of semiconducting MoS
2
to form a hybrid heterostructure. Their ability to switch between two spin states on applying an external stimulus (light irradiation or temperature change) serves to generate strain over the MoS
2
layer. A volume change accompanies this spin crossover, and the created strain induces a substantial and reversible change of the electrical and optical properties of the heterostructure.
Spin-crossover nanoparticles have been covalently grafted onto a semiconducting MoS
2
layer to form a self-strainable heterostructure. Under light or thermal stimulus, the nanoparticles switch between their high- and low-spin states, in which they have different volumes. This generates a reversible strain over the MoS
2
layer and, in turn, alters the electrical and optical properties of the heterostructure. |
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ISSN: | 1755-4330 1755-4349 |
DOI: | 10.1038/s41557-021-00795-y |