Wafer-Scale Production of Transition Metal Dichalcogenides and Alloy Monolayers by Nanocrystal Conversion for Large-Scale Ultrathin Flexible Electronics

• Published in: Nano letters 2021-11, Vol.21 (21), p.9153-9163
• Main Authors: Kim, Jihoon, Seung, Hyojin, Kang, Dohun, Kim, Joodeok, Bae, Hyeonhu, Park, Hayoung, Kang, Sungsu, Choi, Changsoon, Choi, Back Kyu, Kim, Ji Soo, Hyeon, Taeghwan, Lee, Hoonkyung, Kim, Dae-Hyeong, Shim, Sangdeok, Park, Jungwon
• Format: Article
• Language: English
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/acs.nanolett.1c02991

Two-dimensional (2D) transition metal dichalcogenide (TMD) layers are unit-cell thick materials with tunable physical properties according to their size, morphology, and chemical composition. Their transition of lab-scale research to industrial-scale applications requires process development for the wafer-scale growth and scalable device fabrication. Herein, we report on a new type of atmospheric pressure chemical vapor deposition (APCVD) process that utilizes colloidal nanoparticles as process-scalable precursors for the wafer-scale production of TMD monolayers. Facile uniform distribution of nanoparticle precursors on the entire substrate leads to the wafer-scale uniform synthesis of TMD monolayers with the controlled size and morphology. Composition-controlled TMD alloy monolayers with tunable bandgaps can be produced by simply mixing dual nanoparticle precursor solutions in the desired ratio. We also demonstrate the fabrication of ultrathin field-effect transistors and flexible electronics with uniformly controlled performance by using TMD monolayers.