Photoemission difference spectroscopy of semiconductors and insulators: assumptions and limitations

For nonmetallic samples such as semiconductors or insulators, changes in surface stoichiometry or the adsorption of atoms or molecules can, and generally do, shift the electronic states or bands at the surface with respect to the Fermi level of the sample. Such shifts have a profound effect on diffe...

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Bibliographic Details
Published in:Surface science 1993-03, Vol.284 (1), p.200-210
Main Author: Henrich, Victor E.
Format: Article
Language:English
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Summary:For nonmetallic samples such as semiconductors or insulators, changes in surface stoichiometry or the adsorption of atoms or molecules can, and generally do, shift the electronic states or bands at the surface with respect to the Fermi level of the sample. Such shifts have a profound effect on differences taken between photoemission spectra from a surface that has been treated in different ways. This paper discusses the types of problems that can arise and the assumptions that are (often implicitly) made when photoemission difference spectra are produced. While there are clearly limitations to the use of photoemission difference spectroscopy with semiconductors and insulators, it is still often possible to obtain meaningful information.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(93)90537-T