Impurity effects on the adhesion of aluminum films on sapphire substrates

• Published in: Materials science & engineering. A, Structural materials : properties, microstructure and processing Structural materials : properties, microstructure and processing, 1998-02, Vol.259 (2), p.253-260
• Main Authors: Schneider, J A, Guthrie, S E, Kriese, M D, Clift, W M, Moody, N R
• Format: Article
• Language: English
• ISSN: 0921-5093

The adhesion of aluminum (Al) films onto sapphire substrates in the presence of controlled contaminants is being invesugated. In this study, adhesion strength is evaluated by continuous scratch and nanoindentation tests to induce delamination of the Al film from the sapphire substrate. If delamination blisters or spallations can be induced, then fracture mechanics based models can be used to calculate the fracture energy or work of adhesion based on the radius of the blister. Initial specimens of 178 nm thick Al films were vapor deposited onto (0001) oriented sapphire substrates with a 5-10 nm layer of carbon sputter deposited onto the sapphire surface of selected samples. Continuous scratch tests promoted blistering of the film in specimens with carbon on the sapphire surface. Delamination blisters could not be induced by continuous indentation testing in samples with or without carbon at the interface. An overlayer of sputtered tantalum (Ta) was then used on a second set of 500 nm thick Al films with and without 10-20 nm of sputtered carbon on the sapphire surface to promote delaminations. With Ta overlayers, continuous nanoindentation techniques induced larger diameter delamination blisters in the specimens with carbon, than in the specimens without carbon. Resistance to blistering, or smaller induced blisters, indicates a higher resistnace to fracture or interfacial strength.