Nitrogen-doped plasma enhanced chemical vapor deposited (PECVD) amorphous carbon: processes and properties

In this work we discuss thin film amorphous carbon, which is deposited in a dual frequency, plasma enhanced chemical vapor deposition (PECVD) system in such a manner that it contains a small amount of nitrogen. Unlike most carbon films deposited using PECVD, the films in this study were deposited on...

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Bibliographic Details
Published in:Thin solid films 2001-11, Vol.398, p.163-169
Main Authors: Smith, Steven M, Voight, Steven A, Tompkins, Harland, Hooper, Andy, Talin, A.Alec, Vella, Joseph
Format: Article
Language:English
Subjects:
Amorphous carbon
Diamond-like carbon (DLC)
Hard coatings
Plasma enhanced carbon vapor deposition (PECVD)
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Summary:In this work we discuss thin film amorphous carbon, which is deposited in a dual frequency, plasma enhanced chemical vapor deposition (PECVD) system in such a manner that it contains a small amount of nitrogen. Unlike most carbon films deposited using PECVD, the films in this study were deposited on the grounded electrode and therefore, subject to little energetic bombardment during growth. Methane was used as the carbon-containing precursor. We illustrate some potential applications for this type of film and discuss the effect of various process parameters on resultant film properties such as optical constants, resistivity, stoichiometry, and chemical bonding and structure.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(01)01425-0