Progress in large-area Cu(InGa)Se2-based thin-film modules with a Zn(O, S, OH)x buffer layer

Applying basically the same innovative and robust fabrication technologies which led to the achievement of high efficiency of 14.2% at an aperture area of 51.7 cm2 with a Zn(O,S,OH)x buffer layer, the following goals have been targeted: (1) 13% efficiency on a 30 cm x30 cm module and (2) establishme...

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Bibliographic Details
Published in:Solar energy materials and solar cells 2001, Vol.67 (1-4), p.11-20
Main Authors: KUSHIYA, Katsumi, TACHIYUKI, Muneyori, NAGOYA, Yoshinori, FUJIMAKI, Atsushi, SANG, Baosheng, OKUMURA, Daisuke, SATOH, Masao, YAMASE, Osamu
Format: Article
Language:English
Subjects:
Applied sciences
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
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Summary:Applying basically the same innovative and robust fabrication technologies which led to the achievement of high efficiency of 14.2% at an aperture area of 51.7 cm2 with a Zn(O,S,OH)x buffer layer, the following goals have been targeted: (1) 13% efficiency on a 30 cm x30 cm module and (2) establishment of the fabrication technologies to attain 140 yen/Wp in the annual production capacity of 100 mWp/a. The main focus is on the technology development (1) to increase the Voc related to the CIGS absorber and (2) to improve the Jsc related to the DC-sputtered ZnO window layer with a multilayered structure. 19 refs.
ISSN:0927-0248
1879-3398
DOI:10.1016/S0927-0248(00)00258-0