Fabrication and characterization of high-performance planar InGaAs/InP separate absorption, grading and multiplication avalanche photodetectors

In this article, we describe the fabrication and characterization of high-performance planar InGaAs/InP separate absorption, grading and multiplication avalanche photodetectors with double-diffused guard rings. The fabricated devices exhibit a breakdown voltage V B of −79–−80 V, an extremely low dar...

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Bibliographic Details
Published in:Solid-state electronics 1999, Vol.43 (3), p.659-663
Main Authors: Ho, Wen-Jeng, Wu, Meng-Chyi, Tu, Yuan-Kuang
Format: Article
Language:English
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