Complementary Resistive Switching Behavior in Tetraindolyl Derivative-Based Memory Devices

Complementary resistive switching (CRS) devices are more advantageous compared to bipolar resistive switching (BRS) devices for memory applications as they can minimize the sneak path problem observed in the case of BRS having a crossbar array structure. Here, we report the CRS behavior of 1,4-bis­(...

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Bibliographic Details
Published in:Langmuir 2022-08, Vol.38 (30), p.9229-9238
Main Authors: Sarkar, Surajit, Rahman, Farhana Yasmin, Banik, Hritinava, Majumdar, Swapan, Bhattacharjee, Debajyoti, Hussain, Syed Arshad
Format: Article
Language:English
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Summary:Complementary resistive switching (CRS) devices are more advantageous compared to bipolar resistive switching (BRS) devices for memory applications as they can minimize the sneak path problem observed in the case of BRS having a crossbar array structure. Here, we report the CRS behavior of 1,4-bis­(di­(1H-indol-3-yl)­methyl)­benzene (Indole1) molecules. Our earlier study revealed that Au/Indole1/Indium tin oxide (ITO) devices showed BRS under ambient conditions. However, the present investigations revealed that when the device is exposed to 353 K or higher temperatures, dynamic evolution of the Au/Indole1/ITO device from BRS to CRS occurred with a very good memory window (∼103), data retention (5.1 × 103 s), stability (50 days), and device yield (∼ 60%). This work explores the application possibility of indole derivatives toward future ultradense resistive random access memory.
ISSN:0743-7463
1520-5827
DOI:10.1021/acs.langmuir.2c01011