Uniform and high performance of monolithically integrated 1 x 12 array of planar GaInAs photodiodes

In this article, we describe the fabrication of a monolithically integrated 1 x 12 array of GaInAs/InP planar photodiodes, which has highly uniform characteristics in dark current, capacitance and crosstalk capacitance, quantum efficiency, and the frequency bandwidth at 3-dB reduction with a deviati...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1997-04, Vol.44 (4), p.559-564
Main Authors: Ho, Wen-Jeng, Wu, Meng-Chyi, Tu, Yuan-Kuang
Format: Article
Language:English
Online Access:Get full text
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