Phase reaction and diffusion path of the SiC/Ti system

• Published in: Metallurgical and materials transactions. A, Physical metallurgy and materials science Physical metallurgy and materials science, 1997-06, Vol.28 (6), p.1385-1390
• Main Authors: NAKA, M, FENG, J. C, SCHUSTER, J. C
• Format: Article
• Language: English
• Subjects: Applied sciences; Condensed matter: structure, mechanical and thermal properties; Diffusion; interface formation; Exact sciences and technology; Metals. Metallurgy; Physics; Solid surfaces and solid-solid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 1073-5623; 1543-1940
• DOI: 10.1007/s11661-997-0275-3

Bonding of SiC to SiC was conducted using Ti foil at bonding temperatures from 1373-1773K in vacuum. The total diffusion path between SiC and Ti was investigated in detail at 1673K using Ti foil with a thickness of 50 mu m. At a bonding time of 0.3 ks, TiC at the Ti side and a mixture of Ti sub 5 Si sub 3 C sub x and TiC at the SiC side were formed, yielding the structure sequence of beta -Ti/Ti+TiC/Ti sub 5 Si sub 3 C sub x +TiC/SiC. Furthermore, at the bonding time of 0.9 ks, a Ti sub 5 Si sub 3 C sub x layer phase appeared between SiC and the mixture of Ti sub 5 Si sub 3 C sub x and TiC. Upon the formation of Ti sub 3 SiC sub 2 (T phase) after the bonding time of 3.6 ks, the complete diffusion path was observed as follows: beta -Ti/Ti+TiC/Ti sub 5 Si sub 3 C sub x +TiC/Ti sub 5 Si sub 3 C sub x /Ti sub 3 SiC sub 2 /SiC. The activation energies for growth of TiC, Ti sub 5 Si sub 3 C sub x , and Ti sub 3 SiC sub 2 were 194, 242, and 358 kJ/mol, respectively.