Electrophoretic deposition [EPD] applied to reaction joining of silicon carbide and silicon nitride ceramics

• Published in: Journal of materials science 2000-06, Vol.35 (12), p.2913-2925
• Main Authors: LESSING, P. A, ERICKSON, A. W, KUNERTH, D. C
• Format: Article
• Language: English
• Subjects: Acetone; Applied sciences; Bonded joints; Building materials. Ceramics. Glasses; Butt joints; Capillarity; Carbon; Carbon black; Ceramic industries; Charged particles; Charging; Chemical industry and chemicals; Electric fields; Electrophoretic deposition; Exact sciences and technology; High temperature; Image analysis; Materials science; Melting points; Organic liquids; Porosity; Precipitates; Reaction bonding; Silicon carbide; Silicon nitride; Siliconizing; Slurries; Structural ceramics; Surface charge; Technical ceramics
• ISSN: 0022-2461; 1573-4803
• DOI: 10.1023/A:1004766424209

Electrophoretic Deposition (EPD) was used to deposit a mixture of SiC or Si3N4 “filler” and reactive carbon (graphite and carbon black) particles onto various SiC or Si3N4 parts in preparation for reaction bonding. The particles had gained a surface charge when mixed into an organic liquid consisting of 90 w % acetone + 10 w % n-butyl amine to form a slurry. The charged particles then moved when placed under the influence of an electric field to form a “green” deposit on the ceramic parts. The green parts were then dried and subsequently joined using a reaction bonding method. In this reaction bonding, molten Si moves into the joint via capillary action and then dissolves carbon and precipitates additional SiC. An optimum mixture of SiC “filler” to C powder ratio of 0.64 was identified. Residual un-reacted or “free” Si was minimized as a result of selecting powders with well-characterized particle size distributions and mixing them in batch formulas generated as part of the research. Image analysis of resulting microstructures indicated residual “free” Si content as low as 7.0 vol % could be realized. Seven volume percent compares favorably with the lowest “free” Si levels available in experimental samples of bulk siliconized (reaction-bonded) SiC manufactured using conventional reaction-bonding techniques. The joints retained the residual silicon over a large number of high-temperature thermal cycles (cycling from below to above the melting point of silicon). Comparisons to commercial reaction-bonded SiC indicated the majority of residual silicon of the joint was retained in closed porosity. This infers that parts made with these joints might be successfully utilized at very high temperatures. It was demonstrated that the EPD technique could be applied to butt, lap, and scarf type joints, including the capability to fill large gaps or undercut sections between parts to be joined. The overall results indicate that EPD, combined with reaction bonding, should allow for the fabrication of large complex structures manufactured from smaller components consisting of silicon carbide or silicon nitride.