InGaAs-GaAs quantum dots for application in long wavelength (1.3 µm) resonant vertical cavity enhanced devices

Microcavity structures containing InGaAs-GaAs quantum dots (QDs) emitting at 1.3 mu m at 300 K have been studied. The energy distribution of excitons remains a nonequilibrium one up to room temperature due to high localization energies in these QDs. Carrier relaxation is found to proceed mainly via...

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Bibliographic Details
Published in:Journal of electronic materials 2000, Vol.29 (5), p.487-493
Main Authors: Maximov, M. V., Krestnikov, I. L., Shernyakov, Y. M., Zhukov, A. E., Maleev, N. A., Musikhin, Y. G., Ustinov, V. M., Alferov, Zh. I., Chernyshov, A. Y., Ledentsov, N. N., Bimberg, D., Maka, T., Torres, C. M. Sotomayor
Format: Article
Language:English
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Summary:Microcavity structures containing InGaAs-GaAs quantum dots (QDs) emitting at 1.3 mu m at 300 K have been studied. The energy distribution of excitons remains a nonequilibrium one up to room temperature due to high localization energies in these QDs. Carrier relaxation is found to proceed mainly via multiphonon processes. The luminescence emission from QDs in a microcavity exhibits a large spectral splitting of TE and TM components as observed in angle-resolved measurements amounting up to 10 nm for an angle of incidence of 30 degree . A 1.3 mu m vertical cavity enhanced QD photodetector based on a single sheet of QDs is shown to have a quantum efficiency > 10%. The ground state electroluminescence of a quantum dot resonant cavity light emitting diode shows no saturation up to 2 kAcm super(-2).
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-000-0033-4