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Investigation of the interfacial structure of ultra-thin platinum films using X-ray reflectivity and X-ray photoelectron spectroscopy
Ultra-thin films of platinum deposited on highly polished 100 silicon have been investigated using X-ray reflectivity (XRR) and X-ray photoelectron spectroscopy (XPS) as part of a study on the interface structure of multilayers used for X-ray mirrors. In this paper results are presented for films de...
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Published in: | Thin solid films 2000-09, Vol.372 (1), p.94-103 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Ultra-thin films of platinum deposited on highly polished 100 silicon have been investigated using X-ray reflectivity (XRR) and X-ray photoelectron spectroscopy (XPS) as part of a study on the interface structure of multilayers used for X-ray mirrors. In this paper results are presented for films deposited by electron beam evaporation and by DC-magnetron sputtering. The reflectivity was fitted by assuming an intermediate platinum silicide layer exists between the platinum and the silicon. XPS data clearly confirmed the existence of such a platinum silicide layer. According to the XRR data this layer was estimated to be approximately 10 Å thick for e-beam samples and approximately 30 Å thick for magnetron samples. For e-beam films the fitted density for the platinum silicide layer was found to decrease from 16.4 g·cm
−3 for a nominal 80 Å film down to 2.65 g·cm
−3 for a nominal 20 Å film. For magnetron sputtered films the fitted density was always within the range of 6.1–6.8 g·cm
−3. The fitted density of the platinum layer from the e-beam results was always within 5% of the density of bulk platinum whereas for the magnetron sputtered films the density decreased uniformly with decreasing film thickness for films with a nominal thickness less than 30 Å. The XPS data show that the magnetron deposited platinum penetrates through the native oxide layer and into the silicon substrate to a far greater degree than the e-beam deposited platinum. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/S0040-6090(00)01044-0 |