Anomalies in characteristics of broad-contact ridge waveguide SCH-SQW lasers based on AlGaAs/InGaAs grown by MBE

The broad‐contact ridge waveguide technology was used to fabricate lasers from low‐dimensional structures grown by molecular beam epitaxy (MBE). The laser diode structure used in the study was an AlGaAs/InGaAs separate‐confinement heterostructure (SCH) with single quantum well (SQW) as the active re...

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Bibliographic Details
Published in:Physica status solidi. A, Applied research Applied research, 2003-01, Vol.195 (1), p.44-49
Main Authors: Kaniewska, M., Ratajczak, J.
Format: Article
Language:English
Subjects:
42.55.Px
42.60.Mi
61.80.Jh
85.60.Bt
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Optics
Optoelectronic device characterization, design, and modeling
Optoelectronic devices
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers
laser diodes
Waveguides, transmission lines, striplines
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Summary:The broad‐contact ridge waveguide technology was used to fabricate lasers from low‐dimensional structures grown by molecular beam epitaxy (MBE). The laser diode structure used in the study was an AlGaAs/InGaAs separate‐confinement heterostructure (SCH) with single quantum well (SQW) as the active region. The light‐output–current (P–I) and current–voltage (I–V) characteristics were measured and images from a scanning electron microscope (SEM) were analysed for evaluation of the manufactured lasers. Irregularities and high leakage currents were observed in the P–I and I–V characteristics, respectively, if lasers had metallisation covering the entire ridge waveguide as usually in the lasers fabricated by this technique. However, the irregularities such as kinks and noise were reduced and the lasers showed stable operation as evidenced by far‐field patterns if only the region just under the contact stripe was electrically excited. We conclude that a plasma exposure during processing steps induces a number of surface defects that can be enough to degrade the performance of the lasers.
ISSN:0031-8965
1521-396X
DOI:10.1002/pssa.200306266