Properties of semiconducting diamonds grown by the temperature-gradient method

• Published in: Diamond and related materials 2003-10, Vol.12 (10), p.1990-1994
• Main Authors: Novikov, N.V., Nachalna, T.A., Ivakhnenko, S.A., Zanevsky, O.A., Belousov, I.S., Malogolovets, V.G., Podzyarei, G.A., Romanko, L.A.
• Format: Article
• Language: English
• Subjects: Cathodoluminescence, ionoluminescence; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity of specific materials; Electrical conductivity; Electronic transport in condensed matter; Elemental semiconductors; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other luminescence and radiative recombination; Physics; Single crystal; Synthetic diamond; Temperature gradient
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/S0925-9635(03)00317-0

We have studied large (∼6-mm diameter) single crystals of semiconducting synthetic diamonds seed—grown by the temperature-gradient method. EPR, IR spectroscopy and cathodoluminescence have been used to examine the defect and impurity composition of the crystals and the distribution of the electrically active impurities in the bulk crystal. Electrophysical measurements of the current–voltage characteristics and temperature dependence of electrical conductivity have been conducted. Contrast in the internal electric fields caused by inhomogeneity in the distribution of acceptor and donor centers is shown to play the decisive role in the electrical properties. Our findings point to considerable promise for the use of the temperature-gradient method to grow large semiconducting diamond single crystals (of the IIb type) with the required electrical properties as well as to the possibility to extend the application of such crystals (or their fragments) to electronics.