Extraction of nonlinear parameters of dispersive avalanche photodiode using pulsed RF measurement and quasi-DC optical excitation

• Published in: IEEE transactions on microwave theory and techniques 2005-06, Vol.53 (6), p.2082-2087
• Main Authors: Ghose, A., Bunz, B., Weide, J., Kompa, G.
• Format: Article
• Language: English
• Subjects: Applied sciences; Avalanche photodiodes; Avalanches; Devices; Dispersion; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Extraction; Frequency synchronization; Mathematical models; Nonlinear optical devices; Nonlinear optics; Nonlinearities; Nonlinearity; Optical pulses; Optical reflection; Optoelectronic devices; Photodiodes; Pulse circuits; pulse measurement; Pulse measurements; Radio frequencies; Radio frequency; Reflection; reflection coefficient measurement; scattering parameters; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Theoretical study. Circuits analysis and design
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/TMTT.2005.848808

A measurement system using a pulsed RF signal is presented for extraction of nonlinear parameters of a large-signal model (LSM) of a dispersive avalanche photodiode. Nonlinear model of the avalanche photodiode was considered as two-port network and vector reflection measurement was carried out using a microwave transition analyzer in pulsed RF mode in conjunction with synchronized pulsed optical stimulus on the photodiode. Square-wave optical stimulus of 5-/spl mu/s width (full width at half maximum) and 5-kHz pulse-repetition frequency (quasi-dc) were synchronized with the pulsed RF excitation using a synchronization circuit. High-frequency dispersion effects were taken into consideration for deriving the current through the photodiode and the theoretical background was given for the derivation of optical and bias-dependent parameters. Nonlinear parameters of LSM of the avalanche photodiode were extracted from the small-signal vector reflection measurement at different bias points and optical conditions. Thermal impedance of the device limits the continuous-wave measurement up to 0.1 mW of optical power, whereas when using the current method, it was possible to characterize the device up to 1.3 mW of peak optical power.