High responsivity GaInAs PIN photodiode by using erbium gettering

In this article, we grow the GaInAs layers by introducing the rare-earth element Er into the GaInAs solutions for liquid-phase epitaxy without any complicated processes or an extended bakeout of the growth melts. The dominant process occurring during the growth of GaInAs layers in the presence of Er...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1995-04, Vol.42 (4), p.639-645
Main Authors: Ho, Wen-Jeng, Wu, Meng-Chyi, Tu, Yuan-Kuang, Shih, Hung-Hui
Format: Article
Language:English
Subjects:
Applied sciences
Bit rate
Coatings
Detectors
Doping
Electronics
Epitaxial growth
Erbium
Exact sciences and technology
Gettering
Optoelectronic devices
PIN photodiodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Space vector pulse width modulation
Temperature
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