An ultra-sensitive colloidal quantum dot infrared photodiode exceeding 100 000% external quantum efficiency via photomultiplication

• Published in: Nanoscale horizons 2024-02, Vol.9 (3), p.487-494
• Main Authors: Jung, Byung Ku, Park, Taesung, Choi, Young Kyun, Lee, Yong Min, Kim, Tae Hyuk, Seo, Bogyeom, Oh, Seongkeun, Shim, Jae Won, Lo, Yu-Hwa, Ng, Tse Nga, Oh, Soong Ju
• Format: Article
• Language: English
• Subjects: Accumulation; Ligands; Medical imaging; Optoelectronic devices; Photodiodes; Quantum dots; Quantum efficiency; Remote sensing; Surveillance systems; Zinc oxide
• ISSN: 2055-6756; 2055-6764; 2055-6764
• DOI: 10.1039/d3nh00456b

In this study, we present ultrasensitive infrared photodiodes based on PbS colloidal quantum dots (CQDs) using a double photomultiplication strategy that utilizes the accumulation of both electron and hole carriers. While electron accumulation was induced by ZnO trap states that were created by treatment in a humid atmosphere, hole accumulation was achieved using a long-chain ligand that increased the barrier to hole collection. Interestingly, we obtained the highest responsivity in photo-multiplicative devices with the long ligands, which contradicts the conventional belief that shorter ligands are more effective for optoelectronic devices. Using these two charge accumulation effects, we achieved an ultrasensitive detector with a responsivity above 7.84 × 10 A W and an external quantum efficiency above 10 % in the infrared region. We believe that the photomultiplication effect has great potential for surveillance systems, bioimaging, remote sensing, and quantum communication.