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Deposition of droplet-free films by vacuum arc evaporation-results and applications

A pulsed high current metal ion source that produces a metallic plasma flux was designed and successfully used for film deposition. The plasma flux consists of the fully ionized plasma beam produced by a pulsed high current vacuum arc transported through a curved magnetic duct. Deposition rates of m...

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Bibliographic Details
Published in:IEEE transactions on plasma science 1999-08, Vol.27 (4), p.1039-1044
Main Authors: Witke, T., Siemroth, P.
Format: Article
Language:English
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Summary:A pulsed high current metal ion source that produces a metallic plasma flux was designed and successfully used for film deposition. The plasma flux consists of the fully ionized plasma beam produced by a pulsed high current vacuum arc transported through a curved magnetic duct. Deposition rates of more than ten nm/s were achieved. The deposited layers are free of macroparticles, holes, and pits. Films of about 50 nm thickness have been deposited homogeneously (thickness variation below 5%) on a 4 in substrate after 300 pulses. Repetition rates are adjustable from more than 100 Hz down to a single pulse depending on the acceptable thermal input. Several applications are described in the paper: 1) deposition of hard, amorphous carbon films (diamond like carbon), 2) droplet-free TiN films for advanced applications, 3) transparent Al/sub 2/O/sub 3/ protective coatings, and 4) metallization for microelectronics.
ISSN:0093-3813
1939-9375
DOI:10.1109/27.782278