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Deposition of droplet-free films by vacuum arc evaporation-results and applications
A pulsed high current metal ion source that produces a metallic plasma flux was designed and successfully used for film deposition. The plasma flux consists of the fully ionized plasma beam produced by a pulsed high current vacuum arc transported through a curved magnetic duct. Deposition rates of m...
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Published in: | IEEE transactions on plasma science 1999-08, Vol.27 (4), p.1039-1044 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | A pulsed high current metal ion source that produces a metallic plasma flux was designed and successfully used for film deposition. The plasma flux consists of the fully ionized plasma beam produced by a pulsed high current vacuum arc transported through a curved magnetic duct. Deposition rates of more than ten nm/s were achieved. The deposited layers are free of macroparticles, holes, and pits. Films of about 50 nm thickness have been deposited homogeneously (thickness variation below 5%) on a 4 in substrate after 300 pulses. Repetition rates are adjustable from more than 100 Hz down to a single pulse depending on the acceptable thermal input. Several applications are described in the paper: 1) deposition of hard, amorphous carbon films (diamond like carbon), 2) droplet-free TiN films for advanced applications, 3) transparent Al/sub 2/O/sub 3/ protective coatings, and 4) metallization for microelectronics. |
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ISSN: | 0093-3813 1939-9375 |
DOI: | 10.1109/27.782278 |