High speed nanophotonic devices based on quantum dots

• Published in: Physica status solidi. A, Applications and materials science Applications and materials science, 2006-11, Vol.203 (14), p.3523-3532
• Main Authors: Bimberg, D., Fiol, G., Kuntz, M., Meuer, C., Lämmlin, M., Ledentsov, N. N., Kovsh, A. R.
• Format: Article
• Language: English
• Subjects: 42.55.Px; 42.60.Fc; 42.65.Yj; 81.05.Ea; 81.07.Ta
• ISSN: 1862-6300; 0031-8965; 1862-6319
• DOI: 10.1002/pssa.200622488

For InAs‐GaAs based quantum dot lasers emitting at 1300 nm digital modulation with bit error rates below 10–11 at –2 dBm receiver power is demonstrated. Error rates of 10–9 or better are realized between 23 °C and 70 °C without current adjustment. Passive and hybrid mode‐locked QD lasers are shown to generate optical pulses with repetition frequencies up to 80 GHz and 40 GHz, respectively, with an ultra‐short minimum pulse length of 710 fs at 20 GHz. The minimum root mean square jitter of 40 GHz hybrid mode‐locked pulses is found to be 400 fs with a corresponding pulse width of 4 ps. Quantum dot based 1.3 µm fiber‐coupled amplifier modules show 40 Gb/s operation with bit error rates below 10–11. Amplifier chip gain up to 26 dB is demonstrated. 710 fs pulses are amplified without pulse broadening. For all devices we use deeply etched narrow ridge waveguide structures which show excellent current and optical confinement. Along with suppressed beam filamentation of the fundamental mode, a low α ‐factor and strongly reduced sensitivity to optical feedback our results demonstrate that QD laser performance is now comparable or even superior to quantum well lasers. These achievements became possible due to systematic devel‐opment of self‐organized growth technologies. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)