Tweaking the Non–Volatile Write–Once–Read–Many–Times (WORM) Memory using Donor‐Acceptor Architecture with Isatin as Core Acceptor

• Published in: ChemPlusChem (Weinheim, Germany) Germany), 2024-08, Vol.89 (8), p.e202400018-n/a
• Main Authors: Ardra, Murali, Gayathri, Ramesh, Swetha, Senthilkumar V., Mohamed Imran, Pradhanekar, Nagarajan, Samuthira
• Format: Article
• Language: English
• Subjects: Charge Transfer; D−A system; Isatin; Organic Memory; WORM
• ISSN: 2192-6506; 2192-6506
• DOI: 10.1002/cplu.202400018

Organic memory devices have attracted attention because they promise flexible electronics, low manufacturing costs, and compatibility with large–scale integration. A series of new D−A architectures were synthesized employing different donor groups and the isatin moiety as the acceptor through Suzuki–Miyaura coupling reactions. Strong intramolecular interactions were observed in the synthesized compounds, further corroborated by an optimal bandgap. The SEM investigation confirmed good molecular ordering and superior thin film surface coverage. All the compounds demonstrated notable binary Write–Once–Read–Many–Times (WORM) memory behaviour. The threshold switching voltage for these D−A systems ranged from −0.79 to −2.37 V, with the compound having isobutyl substituent showing the lowest threshold voltage and maximum ON/OFF ratio of 102, thus outperforming others. The combined effects of charge transfer and charge trapping are responsible for the resistive switching mechanism prevailing in these systems. The alterations in D−A molecules that affect molecular packing, thin film morphology, and, finally, the memory performance of the active layer are highlighted in this work. Isatin with various donor moieties was synthesized to fabricate memory devices. The devices exhibited non–volatile resistive switching memory with binary Write–Once–Read–Many–Times (WORM) memory behavior.