Quantum Light Generation Based on GaN Microring toward Fully On-Chip Source

• Published in: Physical review letters 2024-03, Vol.132 (13), p.133603-133603, Article 133603
• Main Authors: Zeng, Hong, He, Zhao-Qin, Fan, Yun-Ru, Luo, Yue, Lyu, Chen, Wu, Jin-Peng, Li, Yun-Bo, Liu, Sheng, Wang, Dong, Zhang, De-Chao, Zeng, Juan-Juan, Deng, Guang-Wei, Wang, You, Song, Hai-Zhi, Wang, Zhen, You, Li-Xing, Guo, Kai, Sun, Chang-Zheng, Luo, Yi, Guo, Guang-Can, Zhou, Qiang
• Format: Article
• Language: English
• ISSN: 0031-9007; 1079-7114
• DOI: 10.1103/PhysRevLett.132.133603

An integrated quantum light source is increasingly desirable in large-scale quantum information processing. Despite recent remarkable advances, a new material platform is constantly being explored for the fully on-chip integration of quantum light generation, active and passive manipulation, and detection. Here, for the first time, we demonstrate a gallium nitride (GaN) microring based quantum light generation in the telecom C-band, which has potential toward the monolithic integration of quantum light source. In our demonstration, the GaN microring has a free spectral range of 330 GHz and a near-zero anomalous dispersion region of over 100 nm. The generation of energy-time entangled photon pair is demonstrated with a typical raw two-photon interference visibility of 95.5±6.5%, which is further configured to generate a heralded single photon with a typical heralded second-order autocorrelation g_{H}^{(2)}(0) of 0.045±0.001. Our results pave the way for developing a chip-scale quantum photonic circuit.