Low voltage electric-double-layer transistor nonenzymic erythromycin sensors based on molecularly imprinted polymers

• Published in: Analytica chimica acta 2024-05, Vol.1305, p.342589-342589, Article 342589
• Main Authors: Liang, Linzi, Jiang, Zhengdong, Luo, Zhiyuan, Liu, Kekang, Liu, Ning, Hu, Qichang, Liu, Yanghui
• Format: Article
• Language: English
• Subjects: Electric-double-layer transistor; Erythromycin; Extended gate; Molecularly imprinted polymers; Sensor
• ISSN: 0003-2670; 1873-4324
• DOI: 10.1016/j.aca.2024.342589

Erythromycin (Ery) is a commonly used antibiotic that can be found ubiquitously in water bodies. The increasing apprehension over the adverse effects of antibiotic remnants in aquatic environments necessitates the prompt advancement of erythromycin detection techniques that are both highly sensitive and compact. Here, we propose a non-enzyme Ery sensor that integrates a mesoporous SiO2-based low-voltage oxide electric-double-layer transistor (EDLT) with a molecular imprinting technique, featuring a molecularly imprinted polymers (MIP) functionalized gate electrode. The mesoporous SiO2-based oxide transistor exhibits excellent electrical characteristics, including an operating voltage of small than 1.0 V, an on/off ratio exceeding 106 and a mobility of 14.95 cm2V−1s−1. At an ultra-low operating voltage within 0.5 V, the sensor exhibits a linear response to the concentration range of 1 nM–10 μM of Ery, with a detection limit of 0.22 nM and a sensitivity of 23.3 mV dec−1. Besides, the single-spike dynamic sensing mode effectively reduces the power consumption of the detection. The proposed sensor provides a rapid and convenient approach to detect Ery in aqueous environments, with benefits such as miniaturization, high sensitivity, and simplicity. Schematic of the fabricated Ery EDLT sensor and the sensitivity of the device to Ery at concentrations of 1 nM–10 μM. [Display omitted] •An EDL transistor erythromycin sensor based on molecularly imprinted polymers.•Ultra-low operating voltage within 0.5 V.•Single-spike dynamic sensing detection with ultra-low power consumption.•With a detection limit of 0.22 nM and a sensitivity of 23.3 mV dec−1.