Synergetic Optimization of Upper and Lower Surfaces of the SnO2 Electron Transport Layer for High-Performance n–i–p Perovskite Solar Cells

• Published in: ACS applied materials & interfaces 2024-07, Vol.16 (26), p.34377-34385
• Main Authors: Xu, Zhengjie, Lou, Qiang, Chen, Jiahao, Xu, Xinxin, Luo, Shiqiang, Nie, Zanxiang, Zhang, Shengdong, Zhou, Hang
• Format: Article
• Language: English
• Subjects: Surfaces, Interfaces, and Applications
• ISSN: 1944-8244; 1944-8252; 1944-8252
• DOI: 10.1021/acsami.4c05629

The SnO2 electron transport layer (ETL) has been recognized as one of the most effective protocols for achieving high-efficiency perovskite solar cells (PSCs). To date, most research has primarily focused on the modification of the upper surface of SnO2 ETL films. The lower surface of the SnO2 film, which directly influences the film formation of solution-processed SnO2, is equally important but receives relatively less attention. Herein, we present a synergetic optimization approach involving the deposition of aluminum oxide (AlOx) via atomic layer deposition (ALD) as a buffer layer and the incorporation of rubidium acetate (RbAc) as an upper surface passivation additive. This process leads to a conformal coating of SnO2 nanoparticles, improved electrical performance, and higher-quality perovskite crystals. As a result, with this composite ETL film, the power conversion efficiency (PCE) reached 22.41 from 20.77%. Further modification with p-butyl iodide (BAI) on the perovskite upper surface increased the champion PCE to 23.32%, with a voltage loss of 0.41 V, ranking among the lowest values for the triple-cation mixed-halide perovskite absorber (1.58 eV). Importantly, the perovskite solar cells remained 87.30% of its initial performance after 14 days of aging and exhibited photostability under long-term UV (254 nm) illumination.