Enhancing the Photovoltaic Efficiency of In0.2Ga0.8N/GaN Quantum Well Intermediate Band Solar Cells Using Combined Electric and Magnetic Fields

This study presents a theoretical investigation into the photovoltaic efficiency of InGaN/GaN quantum well-based intermediate band solar cells (IBSCs) under the simultaneous influence of electric and magnetic fields. The finite element method is employed to numerically solve the one-dimensional Schr...

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Bibliographic Details
Published in:Materials 2024-10, Vol.17 (21), p.5219
Main Authors: Abboudi, Hassan, En-nadir, Redouane, Basyooni-M. Kabatas, Mohamed A., El Baraka, Ayoub, Belaid, Walid, Ez-zejjari, Ilyass, El Ghazi, Haddou, Jorio, Anouar, Zorkani, Izeddine
Format: Article
Language:English
Subjects:
Approximation
Efficiency
Electric fields
Energy
Energy conversion efficiency
Energy levels
Finite element analysis
Finite element method
Gallium nitrides
Indium
Magnetic fields
Optical transition
Photovoltaic cells
Photovoltaic conversion
Quantum dots
Quantum wells
Schrodinger equation
Semiconductors
Short circuit currents
Solar cells
Solar magnetic field
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Summary:This study presents a theoretical investigation into the photovoltaic efficiency of InGaN/GaN quantum well-based intermediate band solar cells (IBSCs) under the simultaneous influence of electric and magnetic fields. The finite element method is employed to numerically solve the one-dimensional Schrödinger equation within the framework of the effective-mass approximation. Our findings reveal that electric and magnetic fields significantly influence the energy levels of electrons and holes, optical transition energies, open-circuit voltages, short-circuit currents, and overall photovoltaic conversion performances of IBSCs. Furthermore, this research indicates that applying a magnetic field positively influences conversion efficiency. Through the optimization of IBSC parameters, an efficiency of approximately 50% is achievable, surpassing the conventional Shockley–Queisser limit. This theoretical study demonstrates the potential for next-generation photovoltaic technology advancements.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma17215219