Enhancing Field-Like Efficiency Via Interface Engineering with Sub-Atomic Layer Ta Insertion

• Published in: Advanced science 2024-12, p.e2412409
• Main Authors: Wang, Shuanghai, He, Kun, Li, Caitao, Xu, Yongkang, Dai, Xingze, Wang, Taikun, Liu, Yu, Li, Yao, Xu, Yongbing, He, Liang
• Format: Article
• Language: English
• ISSN: 2198-3844; 2198-3844
• DOI: 10.1002/advs.202412409

The prevailing research emphasis has been on reducing the critical switching current density (J ) by enhancing the damping-like efficiency (β ). However, recent studies have shown that the field-like efficiency (β ) can also play a major role in reducing J . In this study, the central inversion asymmetry of Pt-Co is significantly enhanced through interface engineering at the sub-atomic layer of Ta, thereby inducing substantial alterations in the β  associated with the interface. The β has shown a 123% increase, from -1.66 Oe/(MA cm ) to -3.8 Oe/(MA cm ). As a result, the multilayered Ta/Pt/Ta (0.3 nm insertion)/Co/Ta structure leads to a notable decrease in J , exceeding a remarkable 90% compared to the simpler Ta/Pt/Co/Ta structure, ultimately achieving a significantly low value of 2.7 MA cm . These findings pave the way for the development of highly efficient and energy-saving spin-orbit torque (SOT)-based spintronic devices, where further optimizations in interface engineering can unlock even greater potential in terms of reduced power consumption and enhanced performance.