In Situ Buried Interface Engineering towards Printable Pb–Sn Perovskite Solar Cells

High-efficiency Pb–Sn narrow-bandgap perovskite solar cells (PSCs) heavily rely on PEDOT:PSS as the hole-transport layer (HTL) owing to its excellent electrical conductivity, dopant-free nature, and facile solution processability. However, the shallow work function (W F) of PEDOT:PSS consequently re...

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Published in:ACS applied materials & interfaces 2024-07, Vol.16 (30), p.39399-39407
Main Authors: K. Pious, Johnpaul, Lai, Huagui, Hu, Juntao, Luo, Deying, Gilshtein, Evgeniia, Siegrist, Severin, Kothandaraman, Radha K., Lu, Zheng-Hong, Wolff, Christian M., Tiwari, Ayodhya N., Fu, Fan
Format: Article
Language:English
Subjects:
electrical conductivity
Energy, Environmental, and Catalysis Applications
engineering
engineers
iodides
materials
solar cells
solutions
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Summary:High-efficiency Pb–Sn narrow-bandgap perovskite solar cells (PSCs) heavily rely on PEDOT:PSS as the hole-transport layer (HTL) owing to its excellent electrical conductivity, dopant-free nature, and facile solution processability. However, the shallow work function (W F) of PEDOT:PSS consequently results in severe minority carrier recombination at the perovskite/HTL interface. Here, we tackle this issue by an in situ interface engineering strategy using a new molecule called 2-fluoro benzylammonium iodide (FBI) that suppresses nonradiative recombination near the Pb–Sn perovskite (FA0.6MA0.4Pb0.4Sn0.6I3)/HTL bottom interface. The W F of PEDOT:PSS increases by 0.1 eV with FBI modification, resulting in Pb–Sn PSCs with 20.5% efficiency and an impressive V OC of 0.843 V. Finally, we have successfully transferred our in situ buried interface modification strategy to fabricate blade-coated FA0.6MA0.4Pb0.4Sn0.6I3 PSCs with 18.3% efficiency and an exceptionally high V OC of 0.845 V.
ISSN:1944-8244
1944-8252
1944-8252
DOI:10.1021/acsami.4c07083