Investigation by EELS and TRIM simulation method of the interaction of Ar + and N + ions with the InP compound

• Published in: Applied surface science 2009-10, Vol.256 (1), p.21-26
• Main Authors: Berrouachedi, N., Bouslama, M., Abdellaoui, A., Ghaffour, M., Jardin, C., Hamaida, K., Monteil, Y., Lounis, Z., Ouerdane, A.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electron energy loss spectroscopy; Exact sciences and technology; Heating; Interaction ions-matter; Physics; Simulation method TRIM; Structural defects
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2009.07.005

In this study, the EELS results revealed the great sensitivity of InP compound submitted to Ar + or N + ions at low energy. The preliminary treatment of InP by the Ar + ions was useful as part of the cleaning process of the surface. Further argon ions bombardment on cleaned InP led however to breaking of chemical bonds In–P, with desorption of phosphorus atoms and appearance of In metal distributed on InP. The damaged InP by Ar + ions, constituted the diphase (In; InP) system of depth of about 30 Å, involving a superficial roughness. The In metal proportion on such a system was determined by a calculation method based on the experimental EELS spectra of pure In and InP. We submitted the heated and no heated system (In; InP) to nitrogen ions bombardment. The nitrogen reacted with the In metal to compensate the phosphorus vacancies so that InN species were formed. The heating of (In; InP) system at 450 °C, allowed the surface reconstruction with elimination of defects due to the structure and the roughness. The temperature also caused the coalescence of In metal towards the surface. Because of the physical stability of the interface of heated (In; InP) system, the nitrogen reacted with the outmost layers of In metal to form a homogeneous layer of InN of thickness estimated at 20 Å. We associated to the EELS the TRIM (Transport and Range of Ions in Matter) simulation method in order to show the mechanism of interaction Ar + or N + ions-InP and determine the disturbed depth as a function of the energy. The EELS alone was not able to give us with accuracy the disturbed depth of the target by these ions.